Ion beam lithography.

Focused Ion Beam Lithography

Neon Ion Beam Lithography (NIBL).

Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm(2), ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination o...

AN ORION PLUS Ion Beam Lithography

Direct write lithography is used in all phases of nanotechnology development activities. In research, it is utilized to create nanostructures into which functional materials can be patterned on the nano-scale. In process development, direct patterning allows the flexible creation of devices with varying features to optimize behavior. In manufacturing of semiconductors and data storage devices, ...

Review Article Direct-Write Ion Beam Lithography

Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid sample material. Based on the type of ion-sample interaction utilized, FIBbasedmanufacturing can be both subtractive and additive, even in the same processing step. Indeed, the capability of easily creating thr...

Computer Simulation of Electron and Ion Beam Lithography of Nanostructures

In this paper a review of the authors results on mathematical modeling of the processes at electron or ion beam lithography of nanostructures is presented. Our Monte Carlo simulation tools for electron and ion exposures are successfully applied for the energy deposition calculation at electron or ion lithography of resist layers. At ion lithography electronic energy losses of penetrating electr...